A APLIKACE SPECIFIKACÍCH 2SB906_07
Elektronické díly: 2SB906_07 
Výrobce: Toshiba Semiconductor
Balení:
Aplikace:
Špendlíky:
Teplota: Min °C | Max °C
Velikost: KB
2SB906_07 PDF
Datasheet PDF : View
2SB906_07 PODOBNÉHO MODELU:
- 2SB900
Silicon Power Transistors - 2SB902
EPITAXIAL PLANAR - 2SB902P
EPITAXIAL PLANAR - 2SB902Q
EPITAXIAL PLANAR - 2SB902R
EPITAXIAL PLANAR - 2SB902S
EPITAXIAL PLANAR - 2SB902T
EPITAXIAL PLANAR - 2SB903
30V/12A High-Speed Switching Applications - 2SB903Q
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB - 2SB903R
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB - 2SB903S
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB - 2SB904
30V/20A High-Speed Switching Applications - 2SB904Q
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR - 2SB904R
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR - 2SB904S
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR