A APLIKACE SPECIFIKACÍCH 2SD1947A
Elektronické díly: 2SD1947A 
Výrobce: Toshiba Semiconductor
Balení:
Aplikace:
Špendlíky:
Teplota: Min °C | Max °C
Velikost: KB
2SD1947A PDF
Datasheet PDF : View
2SD1947A PODOBNÉHO MODELU:
- 2SD1902
PNP/NPN Triple Diffused Planar Type Silicon Transistors - 2SD1902Q
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 - 2SD1902R
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 - 2SD1902S
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 - 2SD1903
30V/8A High-Current Switching Applications - 2SD1903Q
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-126 - 2SD1903R
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-126 - 2SD1903S
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-126 - 2SD1904
PNP/NPN Epitaxial Planar Silicon Transistors - 2SD1904Q
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220 - 2SD1904R
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220 - 2SD1904S
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220 - 2SD1905
- 2SD1905Q
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7A I(C) | TO-221VAR - 2SD1905R
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7A I(C) | TO-221VAR