A APLIKACE SPECIFIKACÍCH 2SD1001EL
Elektronické díly: 2SD1001EL 
Výrobce:
Balení:
Aplikace: 80v300ma89
Špendlíky:
Teplota: Min °C | Max °C
Velikost: KB
2SD1001EL PDF
Datasheet PDF :
2SD1001EL PODOBNÉHO MODELU:
- 2SD1000
SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD - 2SD1000-T2
Silicon transistor - 2SD1000LK
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-243 - 2SD1000LL
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-243 - 2SD1000LM
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-243 - 2SD1001
SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD - 2SD1001-T1
Silicon transistor - 2SD1001-T2
Silicon transistor - 2SD1001EK
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SOT-89 - 2SD1001EL
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SOT-89 - 2SD1001EM
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SOT-89 - 2SD1005
Silicon Epitaxia - 2SD1005-T2
Silicon transistor - 2SD1005BU
BJT - 2SD1005BV
BJT