A APLIKACE SPECIFIKACÍCH ISL9N312AP3
Elektronické díly: ISL9N312AP3 
Výrobce: Fairchild Semiconductor
Balení:
Aplikace:
Špendlíky:
Teplota: Min °C | Max °C
Velikost: KB
ISL9N312AP3 PDF
Datasheet PDF : View
ISL9N312AP3 PODOBNÉHO MODELU:
- ISL9N310AD3
- ISL9N310AD3ST
N-CHANNEL LOGIC LEVEL OPTIMIZED ULTRAFET TRENCH POWER MOSFETS - ISL9N310AP3
N-Channel Logic Level Optimized UltraFET Trench Power MOSFETs - ISL9N310AS3
N-CHANNEL LOGIC LEVEL OPTIMIZED ULTRAFET TRENCH POWER MOSFETS - ISL9N310AS3ST
N-CHANNEL LOGIC LEVEL OPTIMIZED ULTRAFET TRENCH POWER MOSFETS - ISL9N312AD3
- ISL9N312AD3ST
N-Channel Logic Level Optimized UltraFET Trench Power MOSFETs - ISL9N312AP3
N-Channel Logic Level Optimized UltraFET Trench Power MOSFETs - ISL9N312AS
N-Channel Logic Level Optimized UltraFET Trench Power MOSFETs - ISL9N312AS3ST
N-CHANNEL LOGIC LEVEL OPTIMIZED ULTRAFET TRENCH POWER MOSFETS - ISL9N315AD3
N-CHANNEL LOGIC LEVEL OPTIMIZED ULTRAFET TRENCH POWER MOSFETS - ISL9N315AD3ST
N-Channel Logic Level Optimized UltraFET Trench Power MOSFETs - ISL9N316AD3ST
N-Channel Logic Level Optimized UltraFET Trench Power MOSFETs - ISL9N316AP3
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-220AB - ISL9N316AS3ST
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-263AB